Leverage your performance
DirectFET™ has a uniquely simple construction that provides breakthroughs in die free package resistance, parasitic package inductance and heat dissipation capabilities. Compared to standard discrete packages DirectFET™ metal "can" construction enables double-sided cooling to effectively increase the efficiency and curent carrying capability of the device in a given footprint. DirectFET™ is compatible with today's high volume manufacturing processes.
Together with the latest MOSFET silicon technology, DirectFET™ products are the right choice for a wide range of applications where thermal behavior, energy efficiency and power density are in focus.