OptiMOS™ Fast Diode 200V/220/250V/300V
Optimized for hard switching topologies
OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V, 220, 250V and 300V is optimized for body diode hard commutation. The improved hard commutation ruggedness of the device allows it to be used under demanding conditions like higher dv/dt, dI/dt and current densities simplifying the design process.
This advantage makes OptiMOS™ FD the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. OptiMOS™ FD family provides a reverse recovery charge (Qrr) optimized solution for customers striving for the highest standards of performance. OptiMOS™ FD 200V, 220, 250V and 300V achieves a 40% Qrr reduction compared to OptiMOS™ 3.
Low Qrr improves the system reliability by providing a significant reduction of voltage overshoot which minimizes the need for a snubber circuit, resulting in less engineering cost and effort. OptiMOS™ FD in SuperSO8 furthermore offers an enhanced temperature capability of 175°C to support higher power density designs and improved robustness.
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