100V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B/E package
- Low RDS(ON) (less than 4.8mOhms) results in Lower Conduction Losses
- Internal Snubber results in Reduced Vds Spike, Improved EMI
- Low Thermal Resistance to PCB (less than 0.8°C/W) results in Increased Power Density
- 100% Rg Tested results in Increased Reliability
- Low Profile (less than 1.05 mm) results in Increased Power Density
- Industry-Standard Pinout results in Multi-Vendor Compatibility
- Compatible with Existing Surface Mount Techniques results in Easier Manufacturing
- RoHS Compliant, Halogen-Free results in Environmentally Friendlier
- MSL1 results in Increased Reliability
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