With OptiMOS™ 200V and 250V Infineon continues to deliver best-in-class on-state resistance (RDS(on)) power MOSFETs with unique performance. The leading RDS(on) and figure of merit (FOM) characteristics reduce power losses, improve overall efficiency and increase power density.
The 200V and 250V product families are optimized for applications such as lighting for 110V AC networks, HID lamps, DC-DC converters and power over ethernet (PoE).
IPC302N20NFD incorporates an OptiMOS™ Fast Diode (FD), which is optimized for body diode hard commutation. The improved hard commutation ruggedness of the device allows it to be used under demanding conditions like higher dv/dt, dI/dt and current densities simplifying the design process.
Summary of Features:
- Industry’s lowest RDS(on)
- Lowest Qg and Qgd
- World’s lowest FOM
- Fast switching diode
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Less paralleling required
- System cost improvement
- Easy-to-design products
- Environmentally friendly
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