OptiMOS™ power MOSFET Source-Down family with industry leading RDS(on) and superior thermal performance
Infineon’s OptiMOS™ low-voltage power MOSFETs present an innovative and improved PQFN package concept with Source-Down technology. With this new package, the silicon is flipped upside down inside of the component. This leads to the source potential connected to the PCB over the thermal pad instead of the drain potential.
The 25V 3.3x3.3mm Source-Down package is the first product of a whole product family entering the market. The full portfolio, ranging from 25V up to 150V, will be fully released within the next two years. This new technology comes in two different footprint versions. A Source-Down version and a Source-Down Center Gate version which is specifically optimized for parallelization. Source-Down offers a lot of benefits compared to current solutions like a lower RDS(on) and an improved thermal performance. In addition less active cooling and a more effective layout for thermal management is provided through Source-Down technology. The OptiMOS™ low-voltage power MOSFET family in PQFN 3.3x3.3 Source-Down targets drives, telecom, SMPS and server applications.