TRENCHSTOP™ IGBT7
950 V/1200 V TRENCHSTOP™ IGBT7 - Higher power density and optimised switching
The 950 V/1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on latest micro-pattern trenches technology which provide strongly reduced losses and offer a high level of controllability. This cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to the formerly used square trench cells. The chip is specially optimized for industrial drives applications and solar energy systems, which means much lower static losses, higher power density and softer switching. Additionally, by raising the allowed maximum operation temperature up to 175 °C in the power module, a significant increase of power density can be obtained.
EconoDUAL™ 3 with TRENCHSTOP™ IGBT7
System simplification and reduced costs by highest power density and performance
EconoDUAL™ 3 modules are now available with the latest TRENCHSTOP™ IGBT7 generation, extending the 1200 V portfolio from 600 A up to 900 A. The 900 A 1200 V EconoDUAL™ features an improved housing for handling higher currents, and temperatures within the same footprint.
In combination with the TRENCHSTOP™ IGBT7 technology, it shows a significant reduction of losses, a high level of controllability and switching softness, as well as high short-circuit capability. Together with the maximum operation temperature of 175°C at overload, high efficiency and power density are achieved, enabling system simplification and cost reduction.
Easy Power Modules with TRENCHSTOP™ IGBT7
Our Easy 1B and Easy 2B family are now fully equipped with the brand-new TRENCHSTOP™ IGBT7 technology, which provides higher power density, greatly reduced losses, and offers a high level of controllability in drives applications. The new portfolio, which is tailored for industrial drives application, offers a complete solution up to 11 kW with PIM modules and up to 22 kW with six-pack modules for the inverter platform.
All the new TRENCHSTOP™ IGBT7 Easy modules are designed with the same pin-out as the former generation, TRENCHSTOP™ IGBT4 modules. Thus, the design cycle and the design efforts of the new inverter platform will be reduced.
Our Easy 3B package is now equipped with the brand-new 950V TRENCHSTOP™ IGBT7 S7 and L7 technology, which is optimized for 1500V PV string inverter. The S7 chip is optimized for 16kHz switching frequency whereas the L7 is optimized for 50Hz/60Hz. Together this chipset can enable a string inverter design capable of more than 200kW and weight well below 100kg. We will offer both inverter and boost solution with this IGBT7 chipset.
> For more product information, please check our Easy product page.
650 V TRENCHSTOP™ IGBT7 T7 Discrete
We introduce the discrete 650 V TRENCHSTOP™ IGBT7 portfolio with new soft EC7 diode inside. This best-in-class price performance range have premium controllability for the better EMI while switching losses are lower than the former technologies.
-
Features
Overload capability
TRENCHSTOP™ IGBT7 allows a maximum junction temperature of 175°C where as TRENCHSTOP™ IGBT4 is limited to 150°C. It is beneficial for drives application due to the need of repetitive short overload operation.
By allowing a maximum junction temperature of 175°C TRENCHSTOP™ IGBT7 is optimized for drives applications -
Features
On state voltage
Compared to TRENCHSTOP™ IGBT4, IGBT7 lowers on-state voltage by around 20%. This brings a significant reduction in losses to target applications, especially to industrial drives, which usually operate with moderate switching frequencies.
IGBT7 lowers on-state voltage VCE(sat) and Vf by around 20% -
Features
Controllability
The TRENCHSTOP™ IGBT7 offers a high level of controllability to match the motor insulation requirements or EMI limitations. The controllability corresponds to the device’s ability to vary the dv/dt by adjusting the value of the gate resistor (RG).
Enhanced controllability of dv/dt -
Features
Improved diode
The EC7 emitter-controlled diode reduces the forward voltage by 100 mV relative to the previous generation EC4. This also lowers the reverse recovery losses. In addition, it improves softness, which benefits the inverter’s EMI behavior.
Reduced forward voltage and lower reverse recovery losses
-
Benefits
Increased power
The EconoDUAL™ 3 with TRENCHSTOP™ IGBT7 can reach up to 900 A. Benefit from higher inverter output current for the same frame size, reduced system cost by avoiding paralleling of modules.
Up to 50 % more power by using the same packages -
Benefits
Frame size jump
An application example for general-purpose drives (GPD) compares modules built with IGBT4 and IGBT7 technologies. This illustrates how power density can be increased while lowering system cost.
Higher power density due to use of smaller power modules -
Benefits
Low losses
The conduction losses at the given dv/dt limitation are significantly decreased. Moreover, there is a reduction in diode losses which leads to overall 15% lower power losses.
Low losses to meet energy efficiency requirements -
Benefits
Optimized driving
CGE and CGC are balanced to give the IGBT7 full control over the dv/dt, and to optimize the switching waveform. CGE is designed to avoid parasitic turn-on effects, zero voltage supply for turn-off is feasible (unipolar gate driver power supply).
IGBT7 is designed for zero voltage turn-off and optimized for simple driving
