TRENCHSTOP™ IGBT7

Overview

1200 V TRENCHSTOP™ IGBT7 - Higher power density and optimised switching

The 1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on latest micro-pattern trenches technology which provide strongly reduced losses and offer a high level of controllability. The chip is specially optimized for industrial drives applications, which means much lower static losses, higher power density and softer switching. Additionally, by raising the allowed maximum operation temperature up to 175 °C in the power module, a significant increase of power density can be obtained.

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Details
Key features Customer Benefits
  • Lowest on state voltage VCE(sat) and Vf
  • Tvj op=175°C at overload
  • Enhanced controllability of dv/dt
  • Optimized switching losses for dv/dt = 5kV/µs
  • 8 μs short-circuit robustness
  • Improved FWD softness
  • Higher power density due to use of smaller power modules (e.g. 25A PIM in Easy1B)
  • Low losses to meet energy efficiency requirements
  • Optimised trade-off between losses and EMI
  • Lower system cost

Technical benefits of TRENCHSTOP™ IGBT7

Best-in-class VCE(sat)

Operation at 175°C at overload

Enhanced controllability optimized for drive applications

Higher power density - Same power in 35% smaller package

Easy with TRENCHSTOP™ IGBT7 - Planned portfolio 1200 V

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Videos
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Introduction to TRENCHSTOP™ IGBT 7

Learn more about our leadtypes of EasyPIM™ and EasyPACK™ with TRENCHSTOP™ IGBT7. Furthermore we demonstrate the differences between TRENCHSTOP™ IGBT 4 and TRENCHSTOP™ IGBT7 and the achievement of the new TRENCHSTOP™ IGBT7.

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