Overview

XHP™ is a new, flexible power module platform supporting both IGBT and CoolSiC™ MOSFETs technologies for high-power applications. XHP™ package enables the harmonization of various inverter platforms ranging from 1.7 kV to 6.5 kV, offering optimized solution for demanding application such as renewables, traction, energy storage ESS, CAV, medium-voltage drives and more. The module allows scalable design with the best-in-class reliability and highest power density.

Key features
  • Low-inductive housing design
  • Scalable design
  • Best-in-class reliability
  • Highest power density
  • Voltage range from 1.7 kV to 6.5 kV
Applications
Medium voltage (MV) drive
Traction
Wind power
Photovoltaic
Battery energy storage (BESS)
Hydrogen electrolysis

Products

About

Highlight of the XHP™ family

Its latest portfolio extension the first of its kind 4.5 kV half-bridge and diode XHP™: FF450R45T3E4_B5 & DD450S45T3E4_B5 are the key enabler to the global trend of integrated 2000-3300 V AC drives.

XHP™ IGBT modules - assuring optimal integration

These modules come in two housings: XHP™ 2 and XHP™ 3. Both have the same dimensions, 140 mm in length, 100 mm in width, and 40 mm in height. This gives product designers the opportunity to build homogenous solutions across different current and voltage ratings in order to implement optimized power converter concepts. The main focus in the development of the new platform was to achieve flexibility and reliability while assuring optimal integration into customer systems.

About the flexible high-power platform

Power modules have proven to be the driving force behind the rapid development in the area of power electronic systems technology, particularly in terms of energy savings, control dynamics, noise reduction, as well as weight and volume reduction. Power semiconductors are primarily used to control the energy flow between energy generation and consumption. This is done precisely and with exceptionally low losses. Continued progress in the performance of power semiconductors drives the demand for corresponding improvements in packaging technology. We have contributed to this evolution across more than two decades.

The new housing for high-power IGBT modules is designed to cover the full voltage range of IGBT chips from 3.3 kV to 6.5 kV. One key innovation is its scalability which will greatly simplify system design and manufacturing. Additionally, due to its robust architecture, the new high-power platform will provide long-term reliability in applications with demanding environmental conditions.

About XHP™ 3

XHP™ 3 is designed for applications with 3.3 kV or 6.5 kV with a half-bridge switch configuration resulting in the first half-bridge modules for 4.5 kV and 6.5 kV. Designed with a modular approach, wide scalability with high current density, and optimal arrangement of main and auxiliary terminals, it is available with 6 kV and 10.4 kV isolation, respectively.

About XHP™ 2

XHP™ 2 is designed for applications ranging from 1.7 kV to 3.3 kV with three AC terminals and four DC terminals for maximizing current-carrying capabilities. The simple scalability of XHP™ 2 frame size owing to basic modular concept makes it ready for future chip generations and fast-switching devices enabling lowest losses.

Highlight of the XHP™ family

Its latest portfolio extension the first of its kind 4.5 kV half-bridge and diode XHP™: FF450R45T3E4_B5 & DD450S45T3E4_B5 are the key enabler to the global trend of integrated 2000-3300 V AC drives.

XHP™ IGBT modules - assuring optimal integration

These modules come in two housings: XHP™ 2 and XHP™ 3. Both have the same dimensions, 140 mm in length, 100 mm in width, and 40 mm in height. This gives product designers the opportunity to build homogenous solutions across different current and voltage ratings in order to implement optimized power converter concepts. The main focus in the development of the new platform was to achieve flexibility and reliability while assuring optimal integration into customer systems.

About the flexible high-power platform

Power modules have proven to be the driving force behind the rapid development in the area of power electronic systems technology, particularly in terms of energy savings, control dynamics, noise reduction, as well as weight and volume reduction. Power semiconductors are primarily used to control the energy flow between energy generation and consumption. This is done precisely and with exceptionally low losses. Continued progress in the performance of power semiconductors drives the demand for corresponding improvements in packaging technology. We have contributed to this evolution across more than two decades.

The new housing for high-power IGBT modules is designed to cover the full voltage range of IGBT chips from 3.3 kV to 6.5 kV. One key innovation is its scalability which will greatly simplify system design and manufacturing. Additionally, due to its robust architecture, the new high-power platform will provide long-term reliability in applications with demanding environmental conditions.

About XHP™ 3

XHP™ 3 is designed for applications with 3.3 kV or 6.5 kV with a half-bridge switch configuration resulting in the first half-bridge modules for 4.5 kV and 6.5 kV. Designed with a modular approach, wide scalability with high current density, and optimal arrangement of main and auxiliary terminals, it is available with 6 kV and 10.4 kV isolation, respectively.

About XHP™ 2

XHP™ 2 is designed for applications ranging from 1.7 kV to 3.3 kV with three AC terminals and four DC terminals for maximizing current-carrying capabilities. The simple scalability of XHP™ 2 frame size owing to basic modular concept makes it ready for future chip generations and fast-switching devices enabling lowest losses.

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