TRENCHSTOP™ 5 in D2Pak
Unique, highest power density 650 V IGBT in D2PAK footprint
Ultra-thin TRENCHSTOPTM 5 IGBT technology from Infineon allows higher power density in smaller chip size. Infineon is the first on the market able to fit 40 A 650 V IGBT with 40 A diode in D2PAK package - 25% higher than any other competitor offering maximum 30 A Duopack IGBT in D2PAK. Now the upgrade of the available SMD designs for up to 20% higher power is possible.
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Internal investigations on example of 3.5 kW welding machine has confirmed that 40 A 650 V IGBT co-packed with 40 A diode in TO-247 package can be replaced by 40 A 650 V IGBT co-packed with 40 A diode in D2PAK mounted on IMS (insulated metal substrate).
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