IHW30N60T

Overview

IGBT 600V in TRENCHSTOP™ and Fieldstop technology with optimised diode. 

Summary of Features

  • Best-in-class V CEsat and V f for outstanding efficiency
  • Lowest switching losses
  • Stable temperature behavior
  • Soft current turn-off waveforms
  • High breakthrough voltage
  • Resistance to current spikes over the SOA

Benefits

  • Lowest power dissipation
  • Better thermal management
  • Lower cost for heat sink, cooling and EMI filtering
  • Highest device safety and reliability
  • Reduced system costs
  • Best-in-class performance for competitive price

Potential Applications

Induction Microwave oven Rice cooker 3D Printers        
Diagrams
Videos

EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. 

Induction Heating: IGBT Presentation

For soft switching topologies such as Induction Heating Cooktops, Infineon offers a comprehensive, high performance portfolio of 600V, 900V, 1100V, 1200V and 1600V discrete IGBTs. The world famous Reverse Conducting RC-H series with TRENCHSTOP™ technology has been developed to provide benchmark performance in terms of switching and conduction losses, high reliability, efficiency and overall system cost reduction.

Watch Part 1

Induction Heating: Infineon IGBT portfolio

For soft switching topologies such as Induction Heating Cooktops, Infineon offers a comprehensive, high performance portfolio of 600V, 900V, 1100V, 1200V and 1600V discrete IGBTs. The world famous Reverse Conducting RC-H series with TRENCHSTOP™ technology has been developed to provide benchmark performance in terms of switching and conduction losses, high reliability, efficiency and overall system cost reduction.

Watch Part 2

EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. 

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