Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Summary of Features:
- 650V breakthrough voltage
- Compared to Infineon’s best-in-class HighSpeed 3 family
- Factor 2.5 lower Q g
- Factor 2 reduction in switching losses
- 200mV reduction in V CE(sat)
- Co-packed with Infineon’s new Rapid Si-diode technology
- Low C OES/E OSS
- Mild positive temperature coefficient V CE(sat)
- Temperature stability of V f
- Best-in-class efficiency, resulting in lower junction and
case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising
- Higher power density design
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