1100V/1200V/1350V 3rd Generation Reverse Conducting IGBT
Excellent Performance and Highest Reliability
The new generation enables more than 20% switching loss reduction and 5°C case temperature reduction in comparison to Infineon’s 2nd Generation RC IGBT family. Lower switching losses reduce the thermal stress on the device and lead to longer lifetime and higher reliability.
Infineon’s 3rd Generation Reverse Conducting IGBT responds to the growing demand for devices with higher breakthrough voltage and current withstand capabilities, by now expanding the range of highest efficiency IGBT for soft switching applications such as Induction Cookers and Photovoltaic Inverters. The new products are optimized for lower switching and conduction losses and provide best-in-class efficiency in 1200V and 1350V voltage classes.
Portfolio extension with 30A and 40A IGBTs, allows for the development of higher power designs in single end topology up to 3.6kW. 30A and 40A devices in 1350V enable extension of the safe operating area (SOA) and higher over-current rating at peak current conditions benefiting the enhanced robustness and reliability. High efficiency, excellent thermal performance and EMI behavior make it the best suited IGBT on the market for Induction Cookers, Photovoltaic Inverters and other resonant switching applications.
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