IGBT Discretes

Overview

Market Leadership Through Groundbreaking Innovation and Application Focus

Striving for the highest standards in performance and quality, Infineon offers a comprehensive application specific discrete IGBT portfolio that is second to none. New products are application specific developed to achieve highest value.

Select one of our product highlights for detailed information

Products
Details

IGBT Discretes Selection Tree

Related Information

EiceDRIVER™ gate driver ICs for MOSFETs, IGBTs, SiC MOSFETs and GaN HEMTs
Concepts providing electrical performance and highest reliability without limiting the design flexibility
CIPOS™ Intelligent Power Modules in different packages, voltage and current classes.

Recommended documents

IGBT Selection Guide - Common IGBT applications and topologies
Infineon EiceDRIVER™ gate driver ICs Selection guide 2019 - Every switch needs a driver
Power and Sensing Selection Guide 2019
Tools & Software
Simulation
Videos

Accelerating the pace of innovation in industrial robotics

2:47

KEWAZO teamed up with Infineon to develop the world’s first on-site construction robot. The KEWAZO scaffolding robot eliminates personal safety risks, realizes significant savings on labor costs and accelerates assembly by 40% or more.

Infineon’s 600 V-650 V IGBT discretes - Portfolio Overview

2:47

Brief introduction into where Infineon’s 600V/650V discrete IGBT portfolio offers the best Performance

More Information

Watch related Videos:
TRENCHSTOP™ 5 Portfolio Overview
TRENCHSTOP™ 5 Soft Hard Switching “S5” Introduction TRENCHSTOP™ 5 Soft Hard Switching “S5”
TRENCHSTOP™ 5 Soft Hard Switching “S5” Application Test
Infineon’s 600 V-650 V IGBT discretes - Portfolio Overview

Training
Training for TRENCHSTOP Performance
30:25

How to choose gate driver for IGBT discretes and modules

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Support