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New TO-247 4pin Kelvin Emitter Package for Discrete IGBTs

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The new TO-247 4pin Kelvin Emitter package addresses the need for increased power density and space saving in applications striving for high efficiency. Infineon's new TO-247PLUS package for high power applications enables up to 120A IGBT co-packed with a full rated diode in the same footprint and pin-out as JEDEC standard TO-247.

 


Latest Innovations


TRENCHSTOP™ Advanced Isolation  

New TRENCHSTOP™ Advanced Isolation

The new TRENCHSTOP™ Advanced Isolation represent the cutting-edge technology in isolated packages. 35% lower thermal resistance R th(j-h) of advance isolation material compared to high grade Iso-foil enables effective and reliable thermal path from chip to the heatsink.
Up to 10°C lower case temperature T c and up to 20% higher power output P out  is possible when replacing TO-247 and standard isolation foil with the new fully isolated Advanced Isolation TO-247 package.

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S5 TRENCHSTOP™ 5 in TO-247 4pin  

New S5 TRENCHSTOP™ 5 in TO-247 4pin

Highest efficiency at medium speed switching from 10kHz to 40kHz with new 50A and 75A S5 650V TRENCHSTOP™5 IGBT in TO-247 4pin Kelvin Emitter package.

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TO-247PLUS 3pin for 1200V IGBT  

New TO-247PLUS 3pin for 1200V IGBT

Bigger active chip area of the new TO-247PLUS package can accommodate up to 75A IGBT with 75A diode in TO-247 footprint. Higher power density of TO-247PLUS can be used to reduce paralleling, increase system power density or system power output. Moreover lower thermal resistance of the TO-247PLUS (20% lower when comparing to standard TO-247) contributes to lower junction temperature on the chip Tj and higher IGB0T efficiency. Thus replacing TO-247-3 with same IGBT chip in TO-247PLUS 3pin allows increasing system power output by 10%.

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TO-247PLUS 4pin for 1200V IGBT  

New TO-247PLUS 4pin for 1200V IGBT

The 4th pin know as Kelvin emitter terminal, bypasses the emitter lead inductance on the gate control loop, enhancing the IGBT’s switching speed and decreasing the switching energy. Dynamic losses are reduced by 20% in comparison to standard TO-247 package, thus increasing the overall system efficiency and enabling the IGBTs to operate at lower temperature. Combination of 4pin Kelvin Emitter package with big active thermal pad area of TO-247PLUS package allows lowest switching losses for high current density discrete IGBT up to 75A 1200V IGBT co-packed with 75A diode.

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Product Selection Guide

Title Size Date Version
22.2 MB 21 Feb 2017 00_00
989 KB 12 Apr 2016 00_00
3.5 MB 15 May 2017 01_00
343 KB 06 Apr 2016 00_01

Product Catalogue

Title Size Date Version
2.9 MB 12 May 2017 03_00

Product Brief

Title Size Date Version
191 KB 28 Apr 2017 01_00
368 KB 14 May 2017 01_00
658 KB 23 Nov 2014 01_00
592 KB 04 Nov 2014 01_00

Application Notes

Title Size Date Version
1.7 MB 14 Oct 2016 02_00
1.1 MB 10 Feb 2017 02_00
1.1 MB 04 Nov 2014 01_00

Additional Product Information

Title Size Date Version
474 KB 16 May 2017 02_00
97 KB 28 Jan 2015 01_00
94 KB 24 Nov 2014 01_00
168 KB 04 Nov 2014 01_00

Product Presentation

Title Size Date Version
1.6 MB 14 May 2017 01_00

Simulation Models

Title Size Date Version
6 KB 11 Jul 2013 01_00
6 KB 11 Jul 2013 01_00
TRENCHSTOP™ 5 in TO-247 4pin Package - Portfolio Overview

TRENCHSTOP™ 5 in TO-247 4pin Package - Portfolio Overview

This video will provide you information about the best in class performance of the TRENCHSTOP™ 5 IGBT technology. Infineon offers the technology in a high power package with an extra Kelvin Emitter pin. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin Sense configuration.

 
Length 3:24
TRENCHSTOP™ 5 in TO-247 4pin Evaluation Board - Board Description And Purpose

TRENCHSTOP™ 5 in TO-247 4pin Evaluation Board - Board Description And Purpose

This video gives a general introduction of the TRENCHSTOP™ 5 in TO-247 4pin Evaluation Board. It explains the main features and components as well as the delivery scope.

 
Length 3:23
Discrete IGBT in TO-247PLUS Target Applications

Discrete IGBT in TO-247PLUS Target Applications

TO-247PLUS discrete IGBT can be used to increase the power density of the design, increasing system nominal current. 100A or 120A are possible to improve thermal conditions - reducing junction temperature - up to 25% Tcase reduction as lower cost alternative to IGBT modules - up 50% component cost reduction. Higher flexibility of design, lower replacement costs. TO-247PLUS is pressure mounting (clip mounting) package for high power IGBT applications. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin Emitter configuration.

 
Length 1:53
Discrete IGBT in TO-247PLUS - Assembly Details and Further Technical Remarks Part1

Discrete IGBT in TO-247PLUS - Assembly Details and Further Technical Remarks Part1

TO-247PLUS is the new Package introduced by Infineon to accommodate more silicone and to have higher current capability than the Industry JEDEC Standard TO-247. It allows higher power dissipation than standard TO-247 and it dramatically reduces the component footprint on the heatsink respect to a standard TO-264.

 
Length 2:39

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