IGBTs – Insulated Gate Bipolar Transistors
IGBT Discretes, Press Pack, power modules and even stack solutions in different voltage- and current classes.
Our IGBT product selection provides a broad variety of different devices. These products address a wide range of applications in the field of automotive, traction, energy transmission, industrial and consumer systems. Our solutions offer very low power losses in the forward and blocking state, require only low drive power and have a high efficiency. The IGBTs can withstand voltages up to 6.5 kV and operate at a switching frequency from 2 kHz to 50 kHz.
Thanks to a wide technology portfolio, the industrial and power control IGBTs are designed for a superior current capability and a higher pulse load capacity for an ultra low power consumption.
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General description of our IGBT portfolio
We offer a broad portfolio of IGBT chips assembled in discrete plastic packages, so called Discretes IGBTs, which are available as Single IGBTs and co-packed with freewheeling Diode. This devices are suitable for applications such as General Purpose Inverters, Solar Inverters, UPS, Induction Heating, Major Home Appliances, Welding and SMPS. Benefits of Discretes IGBT are high current density and low power dissipation resulting in higher efficiency and smaller heat sink to allow lower overall system cost.
Larger arrangements that form basic building blocks of power electronic equipment are considered Power Modules usually combining IGBT and diode dies in various topologies. With the help of high performance components, these power modules can cope with the needs of highest power applications. From all-in-one power integrated modules with rectifier, brake chopper and to inverter part, Infineon products cover a range from only hundreds of watts to several megawatts. General purpose drives, servo-units and renewable energy applications like solar inverters or wind applications benefit from the outstanding performance, efficiency and longevity of these highly reliable products.
The HybridPACK™ family as a special product series with automotive qualification is available to support the designer's efforts in electric mobility. Infineon further supports the automotive industry, providing a variety of discrete IGBT power semiconductors qualified according to AECQ101.
To ease setting up a laboratory experiment or a first prototype, Infineon helps by providing evaluation boards for most of the products to accelerate development cycles. Thus, conclusive results can be generated within the shortest possible time.
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IGBT - basic know-how: how does an Insulated Gate Bipolar Transistor work?
Learn about the specific technology and preferred areas of application of an IGBT and the differences between IGBT and MOSFET.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this training, you can expect an initial overview on important concepts, such as thermal impedance (Zth), thermal resistance (Rth), virtual junction temperature (Tvj), and heatsink temperature (Th).
Then, you will understand how to determine both thermal impedance curves (principle of measurement) and the junction temperature.
In the last sections of this training some challenges and optimization of Rth and Zth measurements including their evaluation will be presented to you.