EiceDRIVER™ with Slew-Rate Control

Overview

Slew-rate control enabled, up to 5.7 kV (rms) galvanically isolated single-channel gate driver families with reinforced isolation (VDE 0884-11)

Slew-rate control enables on-the-fly gate resistor adjustments during operation, thus simultaneously improving system efficiency and electromagnetic interference (EMI).

The EiceDRIVER™ isolated gate driver portfolio consists of Compact and Enhanced series drivers.  Both series implement slew-rate control functionality.

The EiceDRIVER™ 2L-SRC Compact family (1ED32xx) implements two-level slew-rate control (2L-SRC) offering the control of two independent gate resistors. It is a single-channel isolated gate driver family with up to 18 A output current and wide output supply voltage range. The family is certified according to UL 1577 with VISO = 5.7kV (rms) and VDE 0884-11 (reinforced isolation) with VIORM = 1797 V (peak).

The EiceDRIVER™ SRC Enhanced family (1EDS-SRC) marks the high-end of slew-rate control gate driver families, implementing multi-level slew-rate control.

Products
Highlights

The EiceDRIVER™ 2L-SRC Compact family (1ED32xx) optimizes the gate driver circuit to balance the reduction of dv/dt and electromagnetic interference (EMI) during start-up and light-load operation, as well as minimizes switching losses during high-load operation. The slew rate can be adapted on-the-fly during operation based on gate resistor changes, enabling system output power to be optimized without changing the BOM and without compromising EMI behavior.

The gate driver family provides driving currents of 10 and 18 A. It also includes a Miller clamp that is highly recommended for power switches that use 0 V turn-off to avoid parasitic turn-on. With voltage ratings up to 2300 V, it supports power switches far beyond 1200 V blocking voltage. Furthermore, UL 1577 and VDE 0884-11 (reinforced isolation) certificates ensure superior application safety and guarantee long operating life.

With high voltage and high safety capabilities, the product family is suitable for applications with demanding isolation requirements, such as 1700 V industrial drives. Furthermore, it is a perfect match for applications including solar systems, uninterruptible power supplies and EV charging.

Key Features Key Benefits Applications
  • EiceDRIVER™ 2L-SRC Compact single channel isolated gate driver 1ED32xx family
  • Two-level slew-rate control feature (2L-SRC)
  • For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
  • 2300 V functional offset voltage capable for selected applications
  • Galvanically isolated coreless transformer gate driver
  • 18 A typical sinking and sourcing peak output current
  • 40 V absolute maximum output supply voltage
  • Max. 110 ns propagation delay with typ. 35 ns input filter
  • High common-mode transient immunity CMTI >200 kV/μs
  • Short-circuit clamping and active shutdown
  • DSO-8 300 mil wide-body package with large creepage distance (>8 mm)

         
  • Integrated filters reduce the need of external filters
  • Tight IC-to-IC turn on propagation delay matching (15 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
  • 1ns propagation delay matching between outputs
  • UL 1577 (planned) VISO = 6.8 kV (rms) for 1 s, 5.7 kV (rms) for 1 min
  • IEC 60747-17/VDE 0884-11 with VIORM = 1767 V (peak, reinforced)
  • Tight propagation delay matching between outputs enables superior slew-rate control functionality over discrete solutions
  • The precise threshold and timings, combined with UL and VDE-11 certification enable superior application safety
  • High isolation capability, can be used in 1700 V Drives inverter applications

 

EiceDRIVER™ isolated gate driver certification

EiceDRIVER Isolated gate driver cerfitcation for EiceDRIVER compact

1) VDE 0884-10 standard expired Dec. 31, 2019, product and testing remain unchanged. 

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Training
EiceDRIVER™ 2L-SRC Compact: isolated driver for gate resistor dimensioning dilemmas

The EiceDRIVER™ 2L-SRC Compact family (1ED32xx), with two-level slew-rate control and Miller Clamp

2L-SRC optimizes the gate resistors for EMI measurements and for normal operation, compared with the conventional solution

Up to 18 A output current, 200 kV/µs CMTI, VDE 0884-11 & UL 1577, ideal for CoolSiC™ SiC MOSFET and IGBT7 in drive, solar, UPS, etc.

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You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

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