Overview

Dual-channel MOSFET EiceDRIVER™ driver ICs are the crucial link between control ICs, powerful MOSFET, and GaN switching devices. MOSFET driver ICs enable high system-level efficiencies, excellent power density, and consistent system robustness.

Key features
  • ±5 A source/sink currents
  • Propagation delay accuracy +6/-4ns
  • 1.8 µs output start-up time
  • 500 ns output shut-down time
  • Active output voltage clamping
  • -12 V input robustness
  • 5 A reverse current robustness
  • 4.2 V and 8 V UVLO options
Applications
AC-DC power conversion for telecom infrastructure
Motor Control
Switched mode power supplies (SMPS)
Server power supply
Photovoltaic

Products

About

EiceDRIVER™ 2EDN gate driver for MOSFETs

The EiceDRIVER™ 2EDN family is offered in 8pin DSO, TSSOP, and WSON packages as well as in a small and versatile 6pin SOT23 packages. High output current capability together with active output voltage clamping, tight timing specifications, and optimized start-up and shut-down times, make the 2EDN family the first choice for many fast-switching applications.

EiceDRIVER™ 2EDN gate driver enables high system-level efficiencies

The highly efficient EiceDRIVER™ 2EDN gate driver family provides 5 ns short slew rates and 10 ns propagation delay accuracy for fast MOSFET and GaN switching. In addition, the 1 ns channel-to-channel accuracy used allows two channels to be used in parallel and a wide range of application options are possible due to the two 5 A channels. 

Excellent power density and consistent system robustness

The EiceDRIVER™ 2EDN family offers a range of features for power density and system robustness, including 4.2 V and 8 V UVLO (Under Voltage Lock Out) options for instant MOSFET protection under abnormal conditions. The 2EDN family is supplied in industry standard packages and pinouts, making it easy to upgrade system designs.

EiceDRIVER™ 2EDN gate driver for MOSFETs

The EiceDRIVER™ 2EDN family is offered in 8pin DSO, TSSOP, and WSON packages as well as in a small and versatile 6pin SOT23 packages. High output current capability together with active output voltage clamping, tight timing specifications, and optimized start-up and shut-down times, make the 2EDN family the first choice for many fast-switching applications.

EiceDRIVER™ 2EDN gate driver enables high system-level efficiencies

The highly efficient EiceDRIVER™ 2EDN gate driver family provides 5 ns short slew rates and 10 ns propagation delay accuracy for fast MOSFET and GaN switching. In addition, the 1 ns channel-to-channel accuracy used allows two channels to be used in parallel and a wide range of application options are possible due to the two 5 A channels. 

Excellent power density and consistent system robustness

The EiceDRIVER™ 2EDN family offers a range of features for power density and system robustness, including 4.2 V and 8 V UVLO (Under Voltage Lock Out) options for instant MOSFET protection under abnormal conditions. The 2EDN family is supplied in industry standard packages and pinouts, making it easy to upgrade system designs.

Documents

Documents

News & highlights

2EDN EiceDRIVER™ - 2 channel low-side gate driver ICs - part 1

2EDN EiceDRIVER™ - 2 channel low-side gate driver ICs - part 1

EiceDRIVER™ gate driver kit for MOSFETs - overview: 1EDN, 2EDN, 1EDN TDI, 2EDI

Infineon offers a wide range of different EiceDRIVER™gate drivers for MOSFETs. 1EDN 1-channel MOSFET gate driver ICs serve as the essential link connecting control ICs, powerful MOSFETs and GaN switching devices. There is also a 2EDN 2-channel MOSFET driver ICs available. In addition, the 1-channel non-isolated gate drivers with truly differential inputs called 1EDN TDI. Finally, the 2EDi, dual-channel isolated product family of gate driver ICs, designed for robust operation in high performance CoolMOS™, CoolSiC™ and OptiMOS™ MOSFET half-bridges.

Next-generation EiceDRIVER™ 2EDN Gen 2 gate driver ICs

The new EiceDRIVER™ 2EDN Gen 2 family comprises robust dual-channel low-side 4 A/5 A gate driver ICs. It is targeting not only fast power MOSFETs but also wide bandgap (WBG) switching devices. The gate drivers enable engineers to meet their design requirements in many different package sizes, ensure safe turn-off before under-voltage lock-out (UVLO) and achieve faster UVLO reaction for robust operation and noise immunity.

2EDN EiceDRIVER™ - 2 channel low-side gate driver ICs - part 2

Infineon's Small Signal portfolio offers N-channel and P-channel products as well as depletion MOSFETs from -250 V up to 800 V. These are available in single, dual and complimentary configurations. The devices are optimized for applications such as LED Drivers, inverse polarity protection and dc to dc converters as well as generic switches.