EiceDRIVER™ 200 V high-side TDI gate driver for GaN SG HEMTs and MOSFETs
The 1EDN71x6Gx is a single-channel gate-driver IC product family optimized for driving Infineon CoolGaN™ Schottky gate (SG) HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including truly differential input (TDI), four driving strength options, active Miller clamp, bootstrap voltage clamp, and with or without adjustable charge pump in PG-SON-10 and PG-TSNP-7 package respectively.
Thanks to the TDI feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN71x6Gx to address even high-side applications.