6EDL04N065PT 650 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)
Overview
EiceDRIVERTM 650 V 2nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in DSO-28 package for IGBTs and MOSFETs.
Summary of Features
- Maximum blocking voltage +650 V
- Output current +0.165 A/-0.375 A
- Integrated Bootstrap Diode
- Neg. Vs immunity up to -50 V
- Over current & under voltage detection
- Programmable delay for fault clear
- Cross-conduction prevention
Benefits
- Higher efficiency
- Increased reliability
- Easy of design
Diagrams
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