6ED2230S12C 1200 V, 0.65 A three phase gate driver IC bare die with integrated bootstrap diode and over current protection
Overview
EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2230S12C provides unique advantages including low-ohmic integrated bootstrap-diode (BSD) and best-in-class robustness to protect against negative transient voltage spikes. It is for designs up to about 6 kW. Contact our sales offices for sample wafer purchase.
Summary of Features
- 1200-V Thin-Film-SOI technology
- Integrated Ultra-fast Bootstrap Diode
- Tolerant to -Vs 100V transient spike
- Source/sink current 0.35 A/0.65 A
- Over current protection (+/- 5%)
- Integrated dead-time protection
- Shoot-through protection
- Independent UVLO for VCC and VBS
- Fault and Enable on the same pin
- Channels propagation delay matched
- 3.3 V, 5 V, 15 V input logic
Benefits
- Integrated BS diode for cost savings
- 100 V -VS for increased reliability
- 50% less on level shift power loss
- Integrated protection for cost saving
- UVLO protection at low supply voltage
Diagrams
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