2EDS7165H
Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing
The EiceDRIVER™ 2EDS7165H is a reinforced isolated gate driverfor secondary-side control over the mandatory safe isolation barrier in SMPS. The strong 4A/8A source/sink dual-channel gate driver comes with a very high 150V/ns CMTI (Common Mode Transient Immunity) for robust operation with fast CoolMOS™ and high power switching noise environment.
The very short propagation delay of 37ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. The 2EDS7165H with 1A/2A is available for smaller MOSFETs or PWM signal/data decoupling for very high power designs working with local boost drivers. Safety certificates in accordance with UL1577, VDE0884-10, and IEC62368 are available. The 2EDS7165H comes in a wide-body 300mil DSO-16 package.
Summary of Features
- Fast switching with accurate timing
- Optimized for area and system BOM
- Robust against switching noise
- Output- to-output channel isolation
- Input-to-output channel isolation
Benefits
- Efficiency gain and lower losses
- Improved thermal behavior at smaller form factor
- Protection and safe operation
- Flexible configurations
- Regulatory safety
Potential Applications
- Telecom DC-DC
- Server
- Industrial SMPS
- UPS
- Battery
- EV-Charging
- Smart Grid
System values
- Enabling higher system efficiency and higher power density designs
- Improving long term competitive cost position, integration and mass manufacturability
- Extending end-product lifetime by improving safe operation of power switches in normal and abnormal field (grid) conditions
- Lower EMI by ground isolation, driver proximity to MOSFETs or when using 4-pin Kelvin source MOSFETs
- Simplified safety approval through component (VDE884-x, UL1577) and system (IEC60950, IEC62368) certificates
