2EDF5215G Fast, robust, dual-channel, high side isolated gate driver with accurate and stable timing and high current output

Overview

Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.

Summary of Features

  • 250 V high and low-side gate driver
  • -250 V negative HS transient immunity
  • 100 V/ns dV/dt robustness
  • 5 A / 9 A source / sink capability
  • +9 ns /-5 ns delay accuracy
  • 4 ns max delay matching
  • 1.2 V output clamping threshold in UVLO
  • <2 μs fast start-up time

Benefits

  • High-side channel isolation
  • Flexible: Independent channels
  • robustness against ground noise
  • Great signal synchronization
  • Reliable for high switching frequencies
  • Safe operation during system start-up
  • Optimal operation in bootstrap supply

Potential Applications

  • Solar optimizers and micro-inverters
  • Server and telecom DC-DC converter
  • Synchronous rectification for SMPS
  • Motor drives and power tools
  • Low-speed electric vehicles (LSEV)
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