2ED2108S06F
Overview
650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode in DSO-8 package
650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also available: 2ED21084S06J.
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) upto + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
- Floating channel designed for bootstrap operation
- Maximum supply voltage of 25 V
- Independent under voltage lockout (UVLO) for both channels
- 200 ns propagation delay
- Internal 540 ns dead time
- HIN, /LIN logic input
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Benefits
- Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin
Find our Variations for 2ED2108S06F
| Part No | Package | Input logic | Interlock | Deadtime |
| DSO - 8 | HIN, LIN |
No | None | |
| DSO - 14 | HIN, LIN | No | None |
|
| DSO - 14 | HIN, /LIN | Yes |
Programmable 540 ns - 5000 ns |
|
| DSO - 8 |
IN, /SD | Yes | Internal 540 ns | |
| DSO - 14 | IN, /SD | Yes |
Programmable 540 ns - 5000 ns |
|
| DSO - 8 | IN, DT/SD |
Yes |
Programmable 540 ns - 2700 ns |
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