CoolGaN™ Integrated Power Stage (IPS)
Ease of use with integrated drivers for highest efficiency and power density
Gallium nitride is seeing increased adoption as a more desirable alternative to traditional silicon substrate semiconductors. This is owing to its ability to operate at far higher switching frequencies and temperatures with significantly lower energy loss and reduced reliance on passive components.
Infineon's CoolGaN™ Integrated Power Stage (IPS) is build upon the solid foundation set by Infineon's highly efficient CoolGaN™ technology. By combining the unmatched robustness of the hybrid-drain-embedded gate injection transistor (HD-GIT) structure with integrated precise EiceDRIVER™ gate driver technology, Infineon brings GaN technology to the next level. This results in a smaller physical footprint and increased power density and energy efficiency - making it a superior alternative to silicon semiconductors.
Infineon currently offers one of the most reliable GaN half-bridge solutions on the market. Two GaN switches in a half-bridge power stage configuration (available in 140mΩ ~ 500 mΩ) with dedicated gate drivers are provided in thermally enhanced QFN (8x8mm) or LGA (6x8mm) packages.
GaN technology with integrated drivers’ benefits systems looking to utilize faster switching frequency and a higher power density. For engineers, CoolGaN™ IPS means more energy-efficient systems owing to the superior energy transference over typical silicon substrates, increased design flexibility with enhanced PCB space utilization, and a faster time-to-market as the single GaN/Power IC offers simplified implementation.
Gallium nitride (GaN) technology offers several considerable advantages over silicon resulting in increased adoption as the semiconductor technology of choice in many applications, particularly those dependent upon higher switching frequencies and power density with lower energy losses.
The ability of Gallium nitride to operate at higher switching frequencies and sustain broader temperatures reduce dependence upon passive cooling components, resulting in a lower system cost and reduced operational expenditure for the end customer. This also permits the production of smaller devices with greater power density.
Infineon’s CoolGaN™ integrated power stage expands upon these core advantages by offering a thermally enhanced QFN package solution. Infineon’s state-of-the-art GaN switch with dedicated drivers in a half-bridge power stage design offers best-in-class form factor, cost, and ease of integration from a single integrated circuit. By integrating Infineon’s proven GaN and driver technology, CoolGaN™ IPS represents an evolutionary step in semiconductor development and is positioned to be the industry’s de-facto GaN solution.
As manufacturers seek to reduce waste by shipping fewer chargers and adapters with their devices and the wider industry continues its transition toward a universal charging port (type C), consumers are demanding more power and versatility from their adapters. CoolGaN™ IPS make possible ultra-compact designs capable of powering multiple devices from a single supply, while the superior power density and efficiency of CoolGaN™ technology also allow consumers to charge their devices faster – a single adaptor compact enough to be taken anywhere and powerful enough to charge all the users electronics with considerable speed.
For household appliances, CoolGaN™ IPS allows for the design of ultrathin power supplies achieving a higher level of energy efficiency than before. This results in cost-saving benefits for the consumer, as well as making it easier to integrate appliances into the household, for example, the mounting of a TV and concealment of power supply.
Other applications include LED lighting - where GaN technology has long been used as a primary conductor solution - server, telecom and networking SMPS, and low-power motor drives. Regardless of the application, an integrated circuit solution means considerable ease of use and a faster time to market.
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