IGLD60R190D1S
Overview
600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation.
It is certified through an extensive GaN-specific qualification process, exceeding industry standards.
Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-C adapters and chargers.
Summary of Features
- E-mode HEMT – normally OFF
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- Consumer-grade qualification
- Bottom-side cooled
Benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
Potential Applications
- Low power SMPS
- Charger/adapters
- Consumer SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).
Support
