IGI65D1414A3MS Two 140 mΩ / 650 V GaN tranistors in half-bridge configuration
Overview
IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(RDS(on) typ.) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package.
This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.
Summary of Features
- Ultra-fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge
- Low output charge
- Kelvin source connection
Benefits
- 2x reduced component count vs. discrete
- Reduced cost
- Reduced weight
- Reduced system complexity
Support
