GS-065-008-6-L-TR CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability
Overview
The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.
Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
Summary of Features
- 700 V e-mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, small 5x6 mm PDFN package
- RDS(on) = 165 mΩ
- IDSmax,DC = 8.8 A /IDSmax,Pulse = 14.8 A
- Ultralow FOM
- Gate drive requirements (0 V to 6 V)
- High switching frequency (> 1 MHz)
- Fast, controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
Benefits
- Supports high operating frequency
- Enables highest system efficiency
- Enables ultra power density designs
- Supports BOM cost savings
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