GaN smart
CoolGaN™ Smart - transistors with integrated lossless current sense
CoolGaN™ Smart Sense seamlessly integrates a high-performance e-mode GaN FET with innovative lossless current sensing technology. This advanced feature allows for real-time, precise monitoring of drain-to-source current, eliminating the need for external current sensing resistors and enhancing overall system efficiency.
- Lossless current sensing
- Easy for device paralleling
- Ease of PCB design
- 2 kV ESD
Infineon's CoolGaN™ Smart Sense products, offer industry-leading integrated current sense and options for additional sense functions. This integration enables efficient and compact design, as the current sense feature is connected to the controller for current mode control and overcurrent protection.
The current sense response time is approximately 200 ns, which is equal or even less than the common controller blanking time. This feature allows for real-time monitoring and control of the current, ensuring a more reliable and efficient operation.
The CoolGaN™ Smart Sense family offers several benefits compared to the traditional current sense method with discrete FET.
One of the main advantages is the improved efficiency of approximately 0.4% in 65 W charger due to the reduced loss from the sense resistor and the removal of thermal hot spots. Additionally, it is easy to upgrade to CoolGaN™ Smart from CoolGaN™ Transistor devices, as no layout rework and PCB respin are needed.
Furthermore, you can save costs by selecting a lower-priced higher ohmic CoolGaN™ Smart device, achieving similar efficiency and thermal performance as the discrete GaN transistor devices.
Consider these benefits of the CoolGaN™ Smart devices in your next design project, to equip your device with the best cost-efficiency ratio.
The CoolGaN™ Smart products are designed to be easy to use and integrate into existing designs. The intrinsic passive GaN FET does not need an extra supply, making it neat and easy to use.
The CoolGaN™ Smart devices have a Kelvin source pin, which decouples the driving loop and power loop resulting in cleaner drive signal. Moreover, it is easy to parallel the products, the same driver can be used to drive paralleled transistor without propagation delay mismatch.
Being a robust and reliable solution, Infineon's CoolGaN™ Smart family can fit several applications to drive decarbonization and digitalization further.
