Medium-voltage GaN bidirectional switches
CoolGaN™ BDS 40 V G3 - monolithic bidirectional switches based on GaN technology
The CoolGaN™ BDS 40 V G3 product family comprises monolithic bidirectional switches (BDS) based on Infineon's gallium nitride technology. The devices are normally-off, with a single Schottky gate (SG) and the ability to block voltages and current in both directions. The products come along in extremely small packages, making them a great fit to serve as battery disconnect switch in various applications.
- Normally-off bidirectional switches
- Drain-to-drain configuration
- Bidirectional voltage blocking
- Low gate charge, low output charge
One of the primary advantages of the CoolGaN™ BDS 40 V G3 products is their design, which integrates two switches in a single device. This integration enables more compact and efficient designs compared to those with back-to-back switches, which typically consist of two separate switches connected in series. CoolGaN™ BDS MV allows to reduce the overall component count, leading to improved reliability and reduced board space requirements.
In smartphones, CoolGaN™ BDS 40 V G3 devices serve as over-voltage protection (OVP) switches, offering a smaller size, lower power loss, and reduced cost. These parts allow bidirectional current flow when in the ON state and provide bidirectional current and voltage blocking when in the OFF state. These devices come in a smaller package and significantly reduce power loss by eliminating the need for series-connected MOSFET devices.
CoolGaN™ BDS 40 V G3 devices serve as high side load-switch, offering a smaller size, lower power loss, and reduced cost. These parts allow bidirectional current flow when in the ON state and provide bidirectional current and voltage blocking when in the OFF state. Furthermore, they can be driven by Infineon's EZ-PD™ CCGx and EZ-PD™ PMGx controllers. These devices come in a smaller package and significantly reduce power loss by eliminating the need for series-connected MOSFET devices.
