650 V/1200 V Emitter Controlled 7

Single packed standalone Emitter Controlled (EC) 7 diode in discrete TO247 2 lead package. This diode technology was developed to improve softness, humidity ruggedness compare to previous discrete diode generations as offering in a two voltage class 650 V and 1200 V with current rating from 20 A to 150 A.

The 650 V EC7 Diode technology has been developed to offer improved softness and humidity ruggedness compared to previous generations of discrete diodes such as EC3, Rapid 1 and Rapid 2. The Soft 650 V Emitter Controlled Silicon Diode 7 provides enhanced reliability for both industrial and home appliance applications. By utilizing the TO247-2 package, discharge-related failure modes are reduced, and the unique high current ratings (up to 150A) increase power density in the discrete package, allowing for smaller size and weight designs. The 650 V EC7 Diode can be used in a variety of applications with a main focus on string and micro inverters, data center UPS, offline UPS/residential UPS, online UPS/industrial UPS, residential air conditioning and welding.

The 1200 V family exhibits excellent softness with a low forward voltage V_F, low reverse recovery charge, and a maximum junction temperature T_j(max) of 175°C. These diodes are qualified for industrial applications according to the relevant tests of JEDEC47/20/22. One special feature of the 1200 V family is its HV-H3TRB robustness, which enables higher system reliability in hard operating conditions. The TO247-2 2-pin package has a larger creepage distance between the pins than a conventional TO247 3-pin package. For 1200 V applications, this new package reduces the need for extra protection against shorts across the anode-cathode pins, such as adding extra insulation material. Altogether, this makes the 1200V EC7 Rapid Silicon competitive in terms of both price/performance offering.