CoolSiC™ Schottky Diodes
Silicon Carbide CoolSiC™ Schottky Diode solutions - Improve efficiency and solution costs
Infineon is the world’s first Silicon Carbide (SiC) discrete power supplier. Long market presence and experience enable Infineon to deliver highly reliable, industry-leading SiC performance. The differences in material properties between Silicon Carbide and Silicon limit the fabrication of practical Silicon unipolar diodes (Schottky diodes) to a range up to 100 V–150 V, with relatively high on-state resistance and leakage current. In SiC material Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of Silicon Carbide (SiC) products covers 600 V and 650 V to 1200 V Schottky diodes.
System solution for PFC
|CCM PFC Power [W]||CoolMOS™ R DS(on) [mΩ]||CoolSiC™ diodes I F [A]|
|Server||Telecom||Server and telecom|
|500||1 x 90||1 x 190||1 x (4~6)|
|750||1 x 99/2 x 190||2 x 190||1 x (6~8)|
|1200||2 x (70~99)||1 x (8~10)|
|2000||2 x 99||2 x (6~8)/1 x (12~16)|
|2700||3 x (41~80)||2 x (8~10)/1 x (16~20)|
|3000||2 x 65/1 x 19||2 x (8~10)/1 x (16~20)|
- R DS(on) depends on target efficiency level, switching frequency and thermal management
- Silico Carbide (SiC) diode current level depends on switching frequency, current limitation and thermal management
In this video you will be guided through some key benefits and features of Infineon newly launched CoolSiC™ 1200V Schottky diode in TO247 real 2 pin package.
This video introduces some application examples and benefits you can get when changing from Si 2 pin diode to our CoolSiC™ 1200 V Schottky diode in TO247 real 2 pin package.
The latest most price-performance generation of Infineon CoolSiC™ Schottky diode 650 V G6 offers the best efficiency per dollar.