CoolSiC™ Schottky Diodes 1200 V G5
The generation 5 enables a new level of efficiency and reliability
The implementation of highly efficient, compact and simple 3-phase inverter systems are currently limited by silicon devices' high dynamic losses operating at 1200V voltages. Alternative designs using 600V/650V devices can partially improve efficiency. However, they come at the expense of more complicated (3-level) topologies with complex control schemes and more power components.
CoolSiC™ Schottky Diode 1200V combined with a Si HighSpeed 3 IGBT enables simpler 2-level topologies
It delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, an improved thermal performance reduces now the junction temperature by 15% compared to a silicon based solution - increasing system reliability as well the possibility to increase output power in a given form factor.
The static losses of the SiC diode often limit the optimization potential of Si IGBT/SiC diode solutions. To fix this, the generation 5 diode comes with a reduction of forward voltage and its temperature dependency to reduce static losses and thereby the price to performance. The generation 5 is targeted for use in solar inverters, UPS systems, motor drives and 3-phase SMPS.
In this video you will be guided through some key benefits and features of Infineon newly launched CoolSiC™ 1200V Schottky diode in TO247 real 2 pin package.
This video introduces some application examples and benefits you can get when changing from Si 2 pin diode to our CoolSiC™ 1200 V Schottky diode in TO247 real 2 pin package.
Offering new levels of efficiency and reliability.
Product portfolio and target applications
Key features - reduction of forward voltage