CY62167EV30LL-45BVXI High-Density 16MBit MoBL™ Parallel SRAM | Sn/Ag/Cu Finish - Ideal for Industrial Applications, Wide Operating Range

Overview

CY62167EV30LL-45BVXI is a high-performance CMOS static RAM available in configurations of 1M words by 16 bits or 2M words by 8 bits. Its advanced circuit design delivers ultra-low active current, making it perfect for More Battery LifeTM (MoBL®) in portable applications like cellular telephones. With an automatic power down feature reducing power consumption by 99% during idle addresses, and standby mode activation when deselected, this device ensures energy-efficient operation. Additionally, the input and output pins enter a high-impedance state under various conditions, including deselection, disabled outputs, and ongoing write operations. Experience superior power efficiency and performance with the CY62167EV30LL-45BVXI CMOS static RAM.

Summary of Features

  • 1M × 16 or 2M × 8 SRAM
  • Very high speed: 45 ns
  • Wide voltage range
  • Ultra-low standby power
  • Ultra-low active power
  • Easy memory expansion with CE1, CE2, and OE
  • Automatic power-down when deselected
  • CMOS for optimum speed and power
  • Industrial temperature: –40 °C to +85 °C
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