nvSRAM (non-volatile SRAM)
Industry’s fastest nvSRAM with infinite endurance
nvSRAM (Non-volatile SRAM or NVRAM) is a stand-alone nonvolatile memory that enables you to instantly capture and preserves a copy of the SRAM data into nonvolatile memory when power is interrupted and allows the data to be recalled without power consumption. They are ideal for data-logging applications like high-performance Programmable Logic Controllers (PLC), Smart Meters and Network Routers requiring fast write speed, high endurance and instant non-volatility. Infineon's nvSRAMs are available in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages.
Density: 64Kb, 128Kb, 256Kb, 512Kb, 1Mb, 4Mb, 8Mb, 16Mb
Interface: I2C, SPI, QSPI, Parallel(x8, x16, x32)
- Fast access -Performs random access reads and writes as fast as 20ns
- Infinite endurance - Offers unlimited writes and reads
- Space saving - Occupies smaller board space compared to BBSRAM
- Radiation Tolerant -Immune to soft errors caused by radiation
Infineon’s nvSRAM combines Cypress' industry leading SRAM technology with best-in-class SONOS nonvolatile technology. Infineon offers a comprehensive portfolio of serial and parallel nvSRAM non-volatile memories.
Our parallel nvSRAMs are industry’s fastest parallel nonvolatile RAM solutions with fastest access time of 20ns. These are available in densities ranging from 64kbit – 16Mbit supports wide voltage range from 2.7V to 5.5V. These are used in applications such as RAID storage, industrial automation, computing and networking.
Our serial nvSRAMs provide infinite read/write endurance and high speed reads and writes. These are available in densities ranging from 64kbit – 1Mbit supports wide voltage range from 2.7V to 5.5V. These are used in applications such as industrial control and automation equipment and smart meters.
Infineon’s nvSRAM products feature a SONOS nonvolatile cell, which is built on a standard SRAM cell. When normal power is applied, the device looks and behaves in a similar manner as a standard SRAM. However, when power drops out, each cell’s contents can be stored automatically in the nonvolatile element positioned above the SRAM cell. This nonvolatile element uses standard CMOS process technology to obtain the high performance of standard SRAMs.
SONOS technology take advantage of Fowler-Nordheim Tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN Tunneling is that it results in vastly higher NV endurance and much slower wear out. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels. Unlike Floating Gate technology, SONOS memory device enables thinner gate stack height for stronger electrostatic control, and thus is more scalable as well.
To know more about SONOS technology, read this whitepaper.
nvSRAM products are among the industry’s lowest power nonvolatile memory solutions consuming lesser active currents than competing EEPROM and BBSRAM (Battery-Backed SRAM or BatRAM) solutions. Additionally, unlike batter backed solutions, nvSRAM memories don’t need an external battery to retain charge. This makes nvSRAM suitable for data-logging applications such as smart meters. The infinite endurance and instant non-volatility ensure that nvSRAMs outperform existing memories like EEPROM and BBSRAM in several datalogging applications.