Active and preferred
RoHS Compliant

FM25W256-G

High-Density 256 kBit SPI Memory device | 20MHz, -40 to 85°C, Pure Sn Finish - Ideal for Industrial Applications
ea.
in stock

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FM25W256-G
FM25W256-G
ea.

Product details

  • Density
    256 kBit
  • Frequency
    20 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 5.5 V
  • Operating Voltage range
    2.7 V to 5.5 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
OPN
FM25W256-G
Product Status active and preferred
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 1940
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SOIC-8 (51-85066)
Packing Size 1940
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25W256-G is a 256-Kbit (32K × 8) serial F-RAM with an SPI interface, offering 100 trillion (1014) read/write cycles and 151-year data retention at 65°C. Operating from 2.7 V to 5.5 V with up to 20 MHz clock, it features NoDelay writes at bus speed, advanced write protection, and low active current (250 μA at 1 MHz). Housed in an 8-pin SOIC for –40°C to +85°C, it is ideal for frequent-write, nonvolatile memory in industrial and mission-critical systems.

Features

  • 256-Kbit F-RAM organized as 32K × 8
  • 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes, immediate data storage
  • Up to 20 MHz SPI bus operation
  • Sophisticated hardware and software write
  • Low active current: 250 μA at 1 MHz
  • Standby current: 15 μA typical
  • Wide voltage operation: 2.7 V to 5.5 V
  • Industrial temperature: –40°C to +85°C
  • Direct hardware replacement for serial
  • Supports SPI mode 0 and mode 3

Benefits

  • Reliable nonvolatile storage for critical
  • Eliminates write delays for real-time systems
  • Withstands frequent, rapid write operations
  • Prevents data loss in power failures
  • Reduces power consumption in standby
  • Flexible use across wide voltage applications
  • Operates in harsh industrial environments
  • Simplifies migration from flash/EEPROM
  • Enhanced data security with write protection
  • Fast SPI interface boosts system speed
  • No wear-out issues like flash/EEPROM
  • Easy integration with standard SPI

Documents

Design resources

Developer community

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