FM24V10-G High-Frequency 1 Mbit I²C F-RAM with Wide Operating Range for Industrial Applications

The FM24V10-G is a 1-Mbit nonvolatile memory utilizing advanced ferroelectric technology. As a ferroelectric random access memory (F-RAM), it provides reliable data retention for 151 years and eliminates complexities associated with EEPROM and other nonvolatile memories. With write operations at bus speed and no write delays, it offers substantial write endurance and lower power consumption during writes compared to EEPROM. Capable of supporting 10¹⁴ read/write cycles, it is ideal for applications requiring frequent or rapid writes, such as data logging and industrial controls. The FM24V10-G enables more frequent data writing with less system overhead, making it a reliable choice for nonvolatile memory applications.