CYRS15B102Q-GGMB

Overview

Infineon offers the industry’s first radiation hardened, highly reliable, small footprint, 2 Mb non-volatile Serial Peripheral Interface (SPI) Ferroelectric RAM (F-RAM) .

Our rad hard SPI F-RAM’s infinite endurance, instant non-volatile write technology, greater than 100-year data retention and immune to Single Event Upsets (SEU) is the highest reliable, non-volatile memory for space applications. 

Summary of Features

  • 2 Mb density
  • SPI interface operating up to 25 MHz
  • Infineon instant non-volatile write technology
  • 10-trillon read/write cycle endurance
  • 120 years data retention at +85°C
  • 0–3.6 V operating voltage range
  • Low operating current (10 mA max)
  • –55°C to +125°C military temperature grade
  • 16-pin ceramic SOP
  • DLAM QML-V qualified
  • Radiation performance
    • TID: > 150 Krad (Si)
    • SEL: > 114 MeV.cm2/mg [LET] @ 115°C
    • SEU: immune
    • SEFI: < 1.34 x 10-4 err/dev.day

Potential Applications

  • Data logging for calibration data for satellites
  • Data storage for sensors and instruments
  • Microcontroller boot code for satellite payloads
  • Direct replacement for serial interface NOR flash and EEPROMs
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