EVAL-6EDL04I065PR 650 V SOI gate driver 6EDL04I065PR evaluation board
Overview
Evaluation board, EVAL-6EDL04I065PR, features Infineon’s latest silicon-in-insulator (SOI) EiceDRVIER™ gate driver IC, 6EDL04I065PR, and TRENCHSTOP™ Reverse Conducting (RC) IGBT, IKD06N60RC2, in a compact, cost-effective three-phase inverter bridge designed to drive a brushless direct current (BLDC) motor.
The board demonstrates 6EDL04I065PR features such as the integrated low-ohmic bootstrap diode, over-current protection (OCP), enable, and fault-reporting, in a compact TSSOP-25 package.
Using Infineon’s SOI technology, 6EDL04I065PR is tolerant to negative transient voltage in inductive load applications. The device can tolerate repetitive negative transient voltage of up to 100 V.
Summary of Features
- Infineon thin-film-SOI-technology
- Maximum blocking voltage +650 V
- Output current +0.165 A/-0.375 A
- Integrated bootstrap diode
- Separate control for all drivers
- Over current and under voltage detection
- Externally programmable fault clear
- Shut down mode during error conditions
- CMOS and LSTTL compatible input
- Signal interlocking of every phase
Benefits
- Provided space savings & reduced cost
- Integrated over-current protection
- Up to 50% lower level shift losses
- Negative transient voltages up to 100 V
- Small IC package solution
Diagrams
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