Infineon Opens DRAM Development Center in Vermont to Support the High-end Server and Workstation Markets
Williston, VT. May 25, 2001 As a major step in reinforcing its leading position in the DRAM market, Infineon Technologies today celebrated the opening of its new 19,000 square-foot state-of-the-art design center in Williston, VT. Designed to focus on the development of high performance DRAM (Dynamic Random Access Memory) for the PC desktop, server and workstation markets, the center works closely with Infineons Memory Products Division to support customer application, design and testing of new memory solutions.
The Vermont center demonstrates Infineons continuing commitment to invest in research and is essential to maintaining our top ranking as a strategic DRAM supplier to our customers, said Dr. Andreas von Zitzewitz, Chief Operating Officer of Infineon Technologies AG. We have enjoyed a long term strategic alliance with IBM in the Burlington VT. region for jointly developing high-performance DRAM products and we will continue our presence in the area with our existing Infineon team. We plan to increase this team substantially by attracting engineering talent from throughout the US.
As part of Infineons global design network, the new development center will play a vital role in complementing the 26 existing centers and in enhancing the continuous exchange of knowledge. In addition to the US, Infineon Technologies also has development centers in India, the UK, Singapore, France, Austria and Germany.
The new site is currently staffed with 15 design and test engineers with expansion capabilities of the facility to ramp up to 60 employees by 2002. Mr. Frank Gelsdorf, with extensive experience in memory chip development, has been appointed manager of the development center.
The Infineon Technologies development center is located at 459 Hurricane Lane, Williston, Vermont, 05495. For more information, contact Mr. Gelsdorf at frank.gelstorf@infineon.com.
The Vermont center demonstrates Infineons continuing commitment to invest in research and is essential to maintaining our top ranking as a strategic DRAM supplier to our customers, said Dr. Andreas von Zitzewitz, Chief Operating Officer of Infineon Technologies AG. We have enjoyed a long term strategic alliance with IBM in the Burlington VT. region for jointly developing high-performance DRAM products and we will continue our presence in the area with our existing Infineon team. We plan to increase this team substantially by attracting engineering talent from throughout the US.
As part of Infineons global design network, the new development center will play a vital role in complementing the 26 existing centers and in enhancing the continuous exchange of knowledge. In addition to the US, Infineon Technologies also has development centers in India, the UK, Singapore, France, Austria and Germany.
The new site is currently staffed with 15 design and test engineers with expansion capabilities of the facility to ramp up to 60 employees by 2002. Mr. Frank Gelsdorf, with extensive experience in memory chip development, has been appointed manager of the development center.
The Infineon Technologies development center is located at 459 Hurricane Lane, Williston, Vermont, 05495. For more information, contact Mr. Gelsdorf at frank.gelstorf@infineon.com.
About Infineon
Infineon Technologies AG, Munich, Germany, offers semiconductor solutions for applications in the wireless and wired communications markets, for the automotive and industrial sectors, for security systems and chip cards as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, and in the Asia-Pacific region from Singapore. In the fiscal year 200 (ending September), the company achieved sales of Euro 7.28 billion with about 29,000 employees worldwide. The company is listed on the DAX index of the Frankfurt Stock Exchange and at the New York Stock Exchange (ticker symbol:IFX). Further information is available at www.infineon.com
Information Number
INFXX200105.084e