TRENCHSTOP™ IGBT7 technology now available in a TO-247 housing
Munich, Germany – 22 September 2020 – Following the EconoDUAL and Easy packages, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) subsequently offers the industry-leading TRENCHSTOP IGBT7 technology in a discrete housing. The device comes in a TO-247 with 650 V break down voltage. The new TRENCHSTOP family portfolio consists of current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A. It can easily be used for replacing previous technologies and for paralleling. This version of IGBT7 is especially suited to applications such as industrial motor drives, power factor correction, photovoltaic, and uninterruptible power supplies.
Based on the new micro-pattern trench technology, the TRENCHSTOP IGBT7 chip performs with much lower static losses. For the same current class, the on-state voltage is reduced by ten percent. This feature brings significant loss reduction in the application, especially for industrial drives, which usually operate at moderate switching frequency. The IGBT T7 technology has a very low saturation voltage (V CE(sat)) and is co-packed with an emitter controlled 7 th generation (EC7) diode, which provides for a 150 mV lower forward voltage (V F) drop and improved reverse-recovery softness.
The device features superior controllability and excellent EMI performance. It can easily be adjusted to provide the application-specific best ratio of dv/dt and switching losses. The 650V TRENCHSTOP IGBT7 provides short circuit robustness as required in the applications. Additionally, it passed the JEDEC based HV-H3TRB (High Voltage High Humidity High Temperature Reverse Bias) test proving the ruggedness of the device in high humidity environments which can typically be found in industrial applications.
The discrete 650 V TRENCHSTOP IGBT7 can be ordered now. More information is available at https://www.infineon.com/igbt7.
Based on the new micro-pattern trench technology from Infineon, the TRENCHSTOP IGBT7 chip in the TO-247 package performs with much lower static losses, the on-state voltage is reduced by ten percent. It has a very low saturation voltage (VCE(sat)) and is co-packed with an emitter controlled 7th generation (EC7) diode with an improved reverse-recovery softness.650_V_TRENCHSTOP_IGBT7_TO-247
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