IR's 1200V Gen8 IGBT Family Delivers Benchmark Efficiency and Ruggedness for Industrial Applications
EL SEGUNDO, Calif. — International Rectifier, IR ® (NYSE: IRF), a world leader in power management technology, today introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR's latest generation trench gate field stop technology delivered in industry standard TO-247 packages to offer best-in-class performance for industrial and energy saving applications.
The novel Gen8 devices are available with current ratings from 8A up to 60A with typical VCE(ON) of 1.7V and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and superior robustness.
"With the development of this new benchmark technology and state-of-the-art IGBT silicon platform, IR underlines its decades of commitment to the advancement of power electronics technology. Our goal is to achieve 100 percent inverterization of all electric motors for a more efficient use of electric energy and a greener environment," said Alberto Guerra, Vice President Strategic Marketing, IR's Energy Saving Products Business Unit.
The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.
"IR's Gen8 IGBT platform offers a superior technology targeting industrial applications. With best-in-class VCE(ON), robustness and excellent switching characteristics, this IGBT platform has been specifically tailored to achieve the demanding challenges of the industrial market," said Llewellyn Vaughan-Edmunds, Senior Product Marketing Manager, IR's Energy Saving Products Business Unit.
Part Number | Package | BV (V) |
I(nom) (A) |
V CE(ON) (V) |
Tsc (µs) |
---|---|---|---|---|---|
IRG8P08N120KD | TO247 | 1200 | 8 | 1.7 | 10 |
IRG8P15N120KD | TO247 | 1200 | 15 | 1.7 | 10 |
IRG8P25N120KD | TO247 | 1200 | 25 | 1.7 | 10 |
IRG8P40N120KD | TO247 | 1200 | 40 | 1.7 | 10 |
IRG8P50N120KD | TO247 | 1200 | 50 | 1.7 | 10 |
IRG8P60N120KD | TO247 | 1200 | 60 | 1.7 | 10 |
Pricing for the IRG8P08120KD begins at US $3.05 in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant and prices are subject to change.
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