IR's IRFHE4250D FastIRFET™6x6 PQFN Power Block Featuring Exposed Top Delivers Superior Efficiency for DC-DC Applications
EL SEGUNDO, Calif. — International Rectifier, IR ® (NYSE: IRF), a world leader in power management technology, today announced the expansion of the power block family of devices with the introduction of the IRFHE4250D FastIRFET™ dual power MOSFET that reduces power losses by more than 5% at 25A compared to best-in-class conventional power block devices. The new 25V device is targeted at 12V input DC-DC synchronous buck applications including advanced telecom and netcom equipment, servers, graphic cards, desktop, Ultra book and notebook computers.
The IRFHE4250D features IR's latest generation silicon and expands the power block packaging platform with a 6x6 PQFN package with exposed top and slim profile for back-side mounting that combined with excellent thermal performance, low on-state resistance (RDS(on)) and gate charge (Qg) delivers superior power density and lower switching losses to shrink PCB size and improve overall system efficiency.
"Featuring the world's first exposed top for a power block, the 60A rated IRFHE4250D FastIRFET™ MOSFET offers industry leading power density for high performance DC-DC applications that demand the highest efficiency," said Stephane Ernoux, Director of Marketing, IR's Power Management Devices Business Unit.
As with all IR power block devices, the IRFHE4250D works with any controller or driver to offer design flexibility while delivering higher current, efficiency and frequency capability in a small footprint, and extends IR's power block offering to a 6x6 PQFN package.
The IRFHE4250D is qualified to industrial grade and moisture sensitivity level 2 (MSL2), and is available in a 6x6 PQFN package with exposed top that features an environmentally friendly and RoHS compliant bill of materials.
|Typ./Max R DS(on) 4.5V
|Qg typ @ 4.5V (nC)
|Qgd typ @ 4.5V (nC)
|3.2 / 4.11.35 / 1.0
JPG | 209 kb | 1500 x 1200 px