IR Expands Portfolio of 60V StrongIRFET™MOSFETs Featuring Ultra-low Rds(on) in Standard and Performance Power Packages for Industrial Applications

Jul 1, 2014 | Market News

EL SEGUNDO, Calif. — International Rectifier, IR ® (NYSE: IRF), a world leader in power management technology, today announced the expansion of its portfolio of 60V StrongIRFET™ power MOSFETs available in various standard and performance power packages. The new MOSFETs, which feature ultra-low on-state resistance (Rds(on)), are designed for a wide range of industrial applications including power tools, Light Electric Vehicle (LEV) inverters, DC motor drives, Li-Ion battery pack protection, and Switched Mode Power Supply (SMPS) secondary-side synchronous rectification.

Available in through-hole and surface mount packages, the expanded 60V StrongIRFET™ family includes the IRF7580M. Housed in a low profile, ultra-compact Medium Can (ME) DirectFET® package that delivers high current density while reducing overall system size and cost, the IRF7580M is well suited for space constrained high power industrial designs.

The family of 19 60V StrongIRFET™ power MOSFETs offers ultra-low on-state resistance (Rds(on)) for improved performance in low frequency applications, very high-current carrying capability, soft body diode, and 3V typical threshold voltage to improve noise immunity. Each device in the family is 100% avalanche tested at industry highest avalanche current levels to ensure the most robust solution for demanding industrial applications.

"Featuring low Rds(on) and high current capability for the industrial market, IR's expansive 60V StrongIRFET™ MOSFET portfolio with its diverse package offering provides designers flexibility in selecting the optimal device for their application based on their price/performance criteria," said David Schroeder, Executive Director of Marketing, IR's Power Management Devices Business Unit.

As with the entire DirectFET ® family, the new IRF7580M Medium Can device has wire bond free construction for improving reliability performance. Moreover, the DirectFET ® package meets all RoHS requirements such as a completely lead-free bill of materials, and is, therefore, ideally suited for long lifecycle designs. Alternative high performance packages feature lead die attach under RoHS exemption 7(a) which is due to expire in 2016.

Part Number B VDSS I D @ 25ºC R DS(on)Max @ V GS = 10V Qg @ V GS=10V Package
116A 3.6 120 Medium Can
DirectFET (ME)
IRFH7085 100A 3.2 110 PQFN 5x6 (B)
IRFR7540 110A 4.8 85 D-PAK
IRFH7545 85A 5.2 73 PQFN 5x6 (E)
IRFR7546 71A 7.9 58 D-PAK
IRFS7530-7P 240A 1.4 236 D2-PAK-7
IRFS7534-7P 1.9 200
IRFS7530 195A 2.0 274 D2-PAK
IRFS7534 2.4 180
IRFS7537 3.3 142
IRFS7540 110A 5.1 88
Part Number B VDSS I D @ 25ºC R DS(on) Max @ V GS = 10V Qg @ V GS=10V Package
IRFB7530 60V
195A 2.0 274 TO-220
IRFP7530 TO-247
IRFB7534 2.4 186 TO-220
IRFB7537 3.3 142 TO-220
IRFP7537 TO-247
IRFB7540 110A 5.1 88 TO-220
IRFB7545 85A 5.9 75
IRFB7546 58A 7.3 58

Pricing for IRF7580M begins at US $0.78 each in 10,000 unit quantities. Production orders are available immediately. Prices are subject to change.

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