IR's Gen8 IGBT Platform Wins "Green Power and New Energy Resources Award" from EEPW

Jun 3, 2014 | Market News

EL SEGUNDO, Calif. — International Rectifier, IR ® (NYSE: IRF), a world leader in power management technology, today announced that the company's Generation 8 (Gen8) 1200V Insulated Gate Bipolar Transistor (IGBT) technology platform has won the Green Power and New Energy Resources category of Electronic Engineering & Product World (EEPW) Power Supply Products Awards.

The Gen8 IGBT platform utilizes IR's latest generation Trench Gate Field Stop technology to offer benchmark performance for industrial and energy saving applications. The novel design allows best-in-class Vce(on) to reduce power dissipation and increase power density, and delivers superior robustness.

IR was named winner of the Green Power and New Energy Resources Award following a review by EEPW's invited panel of experts comprising scholars and engineers and online voting by EEPW readers.

"With our mission to develop advanced power management products and our commitment to supporting green engineering in China, we are delighted to receive recognition for our Gen8 IGBT platform which is tailored to industrial and energy saving applications," said Adam White, IR's Senior Vice President, Global Sales.

The new technology offers softer turn-off characteristics ideal for motor drive applications, which minimizes dv/dt to reduce EMI and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.

More information on EEPW's Power Supply Products Awards 2013 is available at: