Infineon Extends Life Time of IHM-B Modules: High Power Semiconductors Now Last Up to 11 Times Longer
Neubiberg, May 16, 2014 – In the future it will be possible to use IGBT High Power Modules (IHM) from Infineon Technologies AG even longer. More robust construction and greatly improved thermal conductivity behavior increase the average life time in comparison to previous models by a factor of up to 11 under the same conditions of use. A major advantage here is that the electrical and mechanical parameters of the module remain the same in spite of the necessary changes involved. As a result there is no need for recertification and the qualification scope is minimized to an extreme extent.
Customers therefore benefit from the greater robustness and reliability of the IHM product family with very low development work or expenses. Another differentiation feature for customers: In spite of the considerable product improvements, the sale price has been kept at the same level. The new IHM-B Enhanced modules will go into volume production in August 2014.
The significantly longer life time of the IHM-B Enhanced modules is based on two central modifications. First of all, a newly implemented manufacturing technology enables more robust bond wire connections. This increases the resilience of the module components in power cycling associated with switching. The power cycling behavior of the IHM-B Enhanced has improved by a factor of two compared to the previous model.
Secondly, the thermal conductivity of the IHM-B Enhanced is increased by the combination of an aluminum silicon carbide (AlSiC) base plate with aluminum nitride (AlN) substrates. Depending on the topology used, the thermal resistivity drops by 16 – 18 percent:For example, with a 2400 A single switch module this means an improvement from 9.3 Kelvin per kilowatt (IHM-B) to only 7.8 Kelvin per kilowatt (IHM-B Enhanced). Significantly better dissipation of heat generated during operation of the module relieves in particular components susceptible to heat, such as chips and bond wires.
"With the IHM-B Enhanced modules we are introducing a new manufacturing technology and a new substrate material. These advances have proven themselves in practical testing since the end of 2012 with challenging applications such as wind mills," saysBjörn-Christoph Schubart, responsible for IGBT High-Power Modules at Infineon. "We've created value by clearly prolonging service life with otherwise unchanged product properties and will continue to expand our excellent position in the High-Power Module sector. The high levels of product reliability and price stability are of particular benefit to our customers in growth markets such as transport, industrial drives and renewable energy."
Portfolio and Availability
The new IHM-B Enhanced modules are available in the topologies Single Switch, Chopper, Chopper with Inverted Diode and Dual-Diode. In the IHM product portfolio, modules of the 1700 V voltage class will be upgraded first in the range of from 800 A to 3600 A. This conversion is to be completed by August 2014. Further information on the IGBT High Power Modules IHM-B Enhanced and their availability can be found at: www.infineon.com/IHM-B
Infineon at the PCIM 2014
Infineon is presenting the IHM-B Enhanced, as well as other components of the family at booth 311 in hall 9 at the PCIM trade fair being held in Nuremberg from May 20 to 22, 2014. Further information about the highlights of the trade fair is to be found at: www.infineon.com/PCIM2014.
Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2013 fiscal year (ending September 30), the Company reported sales of Euro 3.84 billion with around 26,700 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).Further information is available at www.infineon.com