IR Enhances PQFN Offering with the Introduction of Dual PQFN2x2 and Dual PQFN3.3x3.3 Power MOSFETs for Low Power Applications
EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the enhancement of its PQFN offering with the introduction of a PQFN 2mm x 2mm and PQFN 3.3mm x3.3 mm package. The new packages integrate two HEXFET® MOSFETs utilizing IR's latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment.
Featuring a pair of power MOSFETs in each package, the new PQFN2x2 and PQFN3.3x3.3 dual devices offer the flexibility of either common drain or half-bridge topologies. Utilizing IR's latest low-voltage silicon technologies (N and P), the devices deliver ultra-low losses. The IRLHS6276, for example, features two MOSFETS each with a typical on-state resistance (RDS(on)) of 33 milliohms in only a 4 mm2 area.
"The new PQFN dual devices offer customers a high density, cost effective solution for switching and DC applications. With the addition of these new packages, IR now offers a broad low-voltage PQFN portfolio that encompasses both N- and P-Channel, 20 V and 30 V, 4.5 V or 2.5 V minimum drive capability, single and dual devices that all deliver extremely low RDS(on)," said Stéphane Ernoux, director, IR's Power Management Devices Business Unit.
The Dual PQFN family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques, feature industry-standard footprint and are RoHS compliant.
Datasheets and a MOSFET product selection tool are available on the International Rectifier website.
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