Infineon’s New 4.5kV IGBT Modules Increase Energy Efficiency and Reduce Switching Losses
Neubiberg, Germany - May 17, 2011 - Infineon Technologies will be lifting the curtain on modules in the 4500 volt range at the PCIM Europe 2011 trade show in Nuremberg, Germany (May 17 to 19). The 4.5kV IHV modules integrate IGBT3/EC3 chips optimized for use in traction drives and high-voltage DC transmission (HVDC). HVDC technology delivers the capability for extremely efficient long-distance electric power transmission. Thanks to the elevated current density of modules incorporating IGBT3/EC3 chips, more power can be transmitted and higher output can be achieved without altering the existing design or needing a more powerful cooling.
“Infineon’s new 4.5kV IHV modules display far higher energy efficiency and significantly lower switching losses. That represents a major technological advancement for our customers: Our IGBT solutions offer enhanced ruggedness and durability, particularly for extremely demanding applications like traction or HVDC systems,” says Martin Hierholzer, Vice President and General Manager Industrial Power at Infineon Technologies.
The new 4.5kV IHV modules combine the tried-and-tested TrenchSTOP™ and FieldSTOP™ technology and complement the modules Infineon already supplies in the 3300 and 6500 volt ranges. While the FieldSTOP™ structure within the power semiconductor ensures a significant reduction in switching losses, the TrenchSTOP™ cell minimizes on-state power losses because of its extremely low saturation voltage. This results in lower losses and reduced cooling requirements, which ultimately decreases the system costs. The advantages of the TrenchSTOP™ technology family furthermore include good ruggedness and short circuit behavior, increased reliability and low electromagnetic interference (EMI).
Infineon will launch the 4.5kV IHV modules for IGBT3/EC3 in two housing versions: initially in the IHM-B housing, the successor of the proven IHM-A module with a storage temperature down to minus 55°C and an operating temperature up to 150°C, and secondly in the highly insulated 6.5kV module housing. With an insulation voltage of 10.2kV, the module provides the clearance and creepage distances required particularly in traction applications.
Samples for 4500V IGBT3/EC3 in the IHV-B housing will be available from the end of 2011 and in the 6.5kV housing from mid-2012.
Infineon Technologies will be presenting the new 4500V IGBT modules at the PCIM Europe 2011 trade show (May 17 to 19, 2011) in Nuremberg, Hall 12, Booth 404.
You will find further information on Infineon’s IGBT offering at www.infineon.com/igbt
Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility and security. In the 2010 fiscal year (ending September 30), the company reported sales of Euro 3.295 billion with approximately 26,650 1 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).
1The number of employees still includes the approximately 3,500 employees of the Wireless Solutions business sold to Intel Corporation.
Infineon’s New 4.5kV IGBT Modules Increase Energy Efficiency and Reduce Switching Losses4.5kV_IHV_Modules
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