New .XT-technology from Infineon Significantly Increases Lifetime of IGBT Modules and Opens the Path for Higher Junction Temperature up to 200°C
Neubiberg – May 04, 2010 – Infineon Technologies today at PCIM Europe 2010 in Nuremberg (May 4-6, 2010) introduces an innovative IGBT internal packaging technology, which significantly increases the lifetime of IGBT modules. The new .XT technology optimizes all interconnections within an IGBT module in regard of lifetime. With these new packaging technologies Infineon addresses the requirement of emerging applications with regard to higher power cycling capabilities and open the path as well to increase power density and higher junction operation temperature.
“By introducing the new .XT technology Infineon again underlines its technology leadership on design and manufacturing of IGBT modules. Infineon is setting a new benchmark in power cycling capability and as a key enabler for higher junction temperature operation”, said Martin Hierholzer, Vice President and General Manager Industrial Power at Infineon Technologies. “Based on these new technologies high demanding applications can be addressed like commercial, construction and agriculture vehicles or wind power.”
The new .XT technology increases the lifetime of IGBT modules by a factor of 10 compared to existing technologies. Alternatively the output power can be increased by 25 percent. The new technology supports junction temperatures up to 200°C.
Power cycling results in temperature changes and leads to mechanical stress for the interconnections within an IGBT module. The different coefficients of thermal expansion of the single layers result in thermal stress, which can lead to material fatigue and wear. The new .XT technology covers all critical areas on power cycling capability within an IGBT module: bond wiring on the chip front side, soldering on the chip back side (die to DCB) and the DCB (Direct Copper Bond) to base plate soldering.
The new set of interconnection technology has been developed to fit into most of the existing Infineon packages as well as into new module packages. All three new joining technologies are adaptable to the standard processes and very suitable for high volume production.
The first product available using the new .XT technology is the PrimePACK 2 module FF900R12IP4LD. The module with dual configuration provides 900A rms and is based on IGBT4 chips with Tj max 150°C operation.
Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, communications, and security. In the 2009 fiscal year (ending September), the company reported sales of Euro 3.03 billion with approximately 25,650 employees worldwide. With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY). Further information is available at www.infineon.com.