Infineon Announces Industry First Dual LDMOS Integrated Power Amplifiers; Ideal for Doherty Architecture and Compact Cellular Amplifier Designs
Neubiberg, Germany and Boston – June 9, 2009 – At the IEEE MTT-S International Microwave Symposium, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today introduced an industry first series of dual integrated LDMOS power amplifiers for wireless network base stations. Incorporating two LDMOS amplifiers in a single package, the new devices provide two output power stages, making them ideal for Doherty-based amplifiers and for compact designs that benefit from reduced board space.
Two of the new devices operate in the 1800 – 2200 MHz frequency range for WCDMA, LTE and TD-SCDMA applications, with output power of either 30W or 40W. The third device operates in the 700 – 1000 MHz for WCDMA, LTE and GSM/EDGE applications, with output power of 30W.
The dual amplifiers are particularly well-suited for Doherty-based designs, which employ separate main and peak power amplifiers to deliver the pe rformance required for 3G and 4G systems. By enabling a reduced footprint for cellular base station amplifiers, the new dual LDMOS integrated amplifiers help address industry requirements for multi-carrier operation from a cell site. Multi-carrier and multi-band amplifier designs are also supported by wide RF (radio frequency) modulation bandwidth.
Compact power amplifier designs with higher efficiency and lower power consumption are key for base station manufacturers to meet the demands for green infrastructure solutions,” said Helmut Vogler, VP and General Manager of RF Power, Infineon Technologies AG. “Our new integrated power amplifiers support innovative amplifier designs that achieve goals both for reduced power consumption and small footprints.”
To balance cost and performance, two of the devices are offered in 20-lead molded plastic packages and one is available in a high-performance, thermally enhanced open cavity package. Typical performance of the Infineon devices includes:
PTMA080304M device, in GSM/EDGE application at 28V and 960 MHz, has 30 dB gain and 28 percent efficiency with Pout of 2 x 6W.
PTMA210304M, in a 2-carrier WCDMA application at 28V and 2140 MHz, has Pout of 2 X3W with 29 dB gain, 22 percent efficiency and ACPR (Adjacent Channel Power Ratio) of -48 dBC.
PTMA210404FL, in a Doherty-based design for a 6-carrier TD-SCDMA applisystem at 28 V, 2017 MHz has a 7.5 dB PAR and 10W Pout average has gain of 27 dB, 35 percent efficiency and ACLR of -34dBc.
The PTMA080304M and PTMA21034M are available in 20-lead molded plastic packages and the PTMA21040FL is available in a thermally-enhanced open cavity package. All are ROHS compliant and are in production.
Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, communications, and security. In the 2008 fiscal year (ending September), the company reported sales of Euro 4.3 billion with approximately 29,100 employees worldwide. With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).
The Infineon dual integrated LDMOS power amplifiers for wireless network base stations are incorporating two LDMOS amplifiers in a single package, providing two output power stages, making them ideal for Doherty-based amplifiers and for compact designs that benefit from reduced board space.WLS200906-062
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