New Infineon RF Power Transistors Offer Highest Peak Power in 700 MHz Band

Jun 17, 2008 | Market News

Neubiberg, Germany and Atlanta, USA – June 17, 2008 – At the IEEE MTT-S International Microwave Symposium here today, Infineon Technologies AG (FSE/NYSE: IFX), a leading supplier of communication ICs and solutions, announced a new family of RF power transistors specifically targeted at wireless infrastructure applications in the 700 MHz frequency band. This band will be used in the U.S. to introduce 4G (fourth-generation) cellular, mobile TV broadcast and other mobile broadband-based services, including LTE (Long Term Evolution), the next-generation wireless network standard. Extending Infineon’s broad portfolio of RF power transistors, the new family includes a 55 W driver and two output stage transistors (170 W and 240 W), offering the industry’s highest peak power in the 700 MHz band.

Based on Infineon’s advanced LDMOS (laterally diffused metal-oxide semiconductor) process technology, the new devices feature internal input and output broadband matching and high linearity, which simplifies amplifier design. They are ideal for use in Doherty amplifiers, in which parallel carrier and peaking stages combine to achieve higher efficiency. Doherty amplifiers are becoming increasingly popular in cellular telephone and wireless-Internet system designs.

"Consumers are increasingly demanding that the wireless networks they use provide the same experience and applications that they enjoy from fixed wireline connections,” said Helmut Vogler, Vice President and General Manager for RF Power, Infineon Technologies. “Networks operating in the 700 MHz band will allow migration of Internet applications from fixed to mobile connections, including Voice-over-IP, video streaming, music downloading and mobile TV. Our new 700 MHz RF power transistors will help build the infrastructure needed to support the demands of a new generation of consumer devices tailored to the new mobile applications.“

Device Details

Typical 2-tone PEP (Peak Envelope Power) performance with a 28 V supply voltage for Infineon’s PTFA070551E/PTFA070551F 55 W FETs includes 18.5 dB gain and 48 percent efficiency. For the PTFA071701GH/PTFA071701HL 170 W FETs, gain is 18 dB gain and efficiency is 40 percent.

With a 30 V supply, typical 2-tone PEP performance of the PTFA072401E/ PTFA072401F 240 W LDMOS transistors includes 18 dB gain and 40 percent efficiency.

All of the products are available in lead-free, RoHS-compliant, thermally enhanced, open-cavity packages with slotted or earless flanges, and are capable of handling a 10:1 VSWR (voltage standing wave ratio) at CW (continuous wave) power output.


Samples of the new 700 MHz RF power transistors are now available, with production scheduled for the fourth quarter of 2008.

Infineon is showing its new family of 700 MHz LDMOS RF power transistors in Booth #1216 at the IEEE MTT-S International Microwave Symposium, June 16 - 19, 2008, in Atlanta, Georgia.

About Infineon

Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, communications, and security. In the 2007 fiscal year (ending September), the company reported sales of Euro 7.7 billion (including Qimonda sales of Euro 3.6 billion) with approximately 43,000 employees worldwide (including approximately 13,500 Qimonda employees). With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX).

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