Infineon Introduces New OptiMOS 3 MOSFETs Featuring World’s Lowest On-State Resistance in SuperSO8 Leadless Packages; Increases Power-Density up to 50 Percent in Industrial, Consumer, Telecommunications Applications

May 27, 2008 | Market News

Neubiberg and Nuremberg, Germany – May 27, 2008 – At the PCIM 2008 Exhibition and Congress in Nuremberg, Infineon Technologies AG (FSE/NYSE: IFX) announced availability of its OptiMOS™ 3 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages, allowing it to offer the world’s lowest R DS(on) (on-state resistance) in leadless packages at those breakdown voltages. Compared to standard TO (Transistor Outline) packages, the SuperSO8 products increase power density by as much as 50 percent, especially in synchronous rectification applications in server SMPSs (switched-mode power supplies). For example, the new best-in-class SuperSO8 devices deliver typical D²-PAK package R DS(on) values at 20 percent of the space requirement.

“The low series resistance and inductances of the leadless-frame packages minimize the package contribution to the overall device behavior, and exploit the capabilities of the OptiMOS 3 silicon technology to the maximum,” said Gerhard Wolf, Director at Power Management and Drives Business Unit of Infineon Technologies.

Best-in-class R DS(on)max of as low as 1.8 milliohms for OptiMOS 3 40V, 2.8 milliohms for 60V and 4.7 milliohms for 80V set a new standard on the SuperSO8 footprint, reducing the on-state resistance by up to 50 percent compared to the next-best competitor. The FOM (figure of merit, calculated as on-state resistance times gate charge) of these devices is as much as 25 percent better than that of similar parts in standard TO packages, enabling even faster switching while minimizing switching and gate-drive losses. This allows higher power densities and less heat generation in the driver. The low package inductance of the SuperSO8 package (less than 0.5 nH compared to 5 to 10 nH for a TO-220 solution) further improves overall efficiency and minimizes ringing under switching conditions.

With an overall package height of 1 mm and a R th-jt (thermal resistance, junction-to-topside) of 16° K/W, the SuperSO8 lends itself to solutions implementing topside cooling in embedded systems or PCB-based modules for vertical placement in 3D integrated systems.

“As a worldwide technology leader in power semiconductors, Infineon is driving the trend towards ultra-small packages that reduce on-state resistance by as much as 50 percent,” said Gerhard Wolf. “Our leadership in power semiconductor manufacturing and packaging technologies results in power semiconductors with best-in-class efficiency and switching characteristics, higher power density, and excellent price/performance ratios that lead to significantly reduced system cost.”

OptiMOS 3 40V, 60V, 80V: Applications and Product Details

The OptiMOS 3 40V, 60V and 80V products are intended for power conversion and power management applications that require high efficiency and power density. These applications include SMPSs, DC/DC converters and DC motor drives in a wide range of products, including computers, home appliances, small electric vehicles, industrial automation systems, telecommunications equipment and such consumer devices as power tools, electric lawnmowers and fans.

The OptiMOS 3 SuperSO8 products meet the needs of fast-switching SMPSs and DC/DC converters in a variety of applications, such as synchronous rectifiers in AC/DC SMPSs, primary-side switches, and secondary side-switches in isolated DC/DC converters and non-isolated (buck) industrial converters, where space, power density and maximum efficiency are key factors. With a thermal resistance of 1° K/W to the PCB, the possibility of top- and double-sided cooling and a continuous current rating of 100 A, the new OptiMOS 3 MOSFET family sets a new standard for low-ohmic MOSFETs in the 40 V to 80 V classes. The family also includes the industry’s first 60 V and 80 V breakdown voltage MOSFETs to be available in an S3O8 package, which represents a 60 percent footprint reduction over standard SO8 or SuperSO8 devices.

The 60V and 80V SuperSO8 devices present the possibility for an efficiency increase of 0.5 percent for server SMPSs compared to solutions using TO packages, or similar efficiencies at 20 percent higher R DS(on) ratings compared to standard solutions.

Availability and Pricing

The new OptiMOS 3 40V, 60V and 80V power MOSFET family in SuperSO8 and S3O8 packages are available with a range of R DS(on) figures. Members of the OptiMOS 3 60V family are now available in production quantities, and 40V and 80V devices are currently being sampled.

In 10,000-piece quantities, the best-in-class OptiMOS 3 60V, with R DS(on) of 2.8 milliohms in an SuperSO8 package, is priced at less than USD 0.99 (Euro 0.64), the 80V version, with R DS(on) of 4.7 milliohms in an SuperSO8 package, is priced at approximately USD 1.10 (Euro 0.70). In the same quantities, a 6.7 milliohm OptiMOS 3 60V in an S3O8 package is USD 0.60 (Euro 0.38), and a 12.3 milliohm OptiMOS 3 80V in an S3O8 package is USD 0.66 (Euro 0.42).

Infineon is showing its new SSO8 and S308 package families of OptiMOS 3 power semiconductors and other power innovations in Booth #A101 at the CPS EXPO show, May 23-26, 2008, in Shenzhen, China.

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About Infineon

Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, communications, and security. In the 2007 fiscal year (ending September), the company reported sales of Euro 7.7 billion (including Qimonda sales of Euro 3.6 billion) with approximately 43,000 employees worldwide (including approximately 13,500 Qimonda employees). With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX).

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Press Photos

  • Infineon's OptiMOS(tm) 3 40V, 60V and 80V N-channel MOSFETs feature the world's lowest on-state resistance in SuperSO8 leadless packages and increases power-density up to 50 percent in industrial, consumer, telecommunications applications.
    Infineon's OptiMOS(tm) 3 40V, 60V and 80V N-channel MOSFETs feature the world's lowest on-state resistance in SuperSO8 leadless packages and increases power-density up to 50 percent in industrial, consumer, telecommunications applications.

    JPG | 264 kb | 1417 x 709 px

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